Toshiba Semiconductor and Storage - TK34A10N1,S4X

KEY Part #: K6397642

TK34A10N1,S4X Pricing (USD) [60335pcs Stock]

  • 1 pcs$0.71495
  • 50 pcs$0.57489
  • 100 pcs$0.51740
  • 500 pcs$0.40242
  • 1,000 pcs$0.31541

Part Number:
TK34A10N1,S4X
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET N-CH 100V 34A TO-220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs, Thyristors - TRIACs, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - JFETs ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TK34A10N1,S4X electronic components. TK34A10N1,S4X can be shipped within 24 hours after order. If you have any demands for TK34A10N1,S4X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK34A10N1,S4X Product Attributes

Part Number : TK34A10N1,S4X
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 100V 34A TO-220
Series : U-MOSVIII-H
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 9.5 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id : 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2600pF @ 50V
FET Feature : -
Power Dissipation (Max) : 35W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220SIS
Package / Case : TO-220-3 Full Pack

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