Nexperia USA Inc. - PMPB10XNEZ

KEY Part #: K6416171

PMPB10XNEZ Pricing (USD) [440888pcs Stock]

  • 1 pcs$0.08389
  • 3,000 pcs$0.07721

Part Number:
PMPB10XNEZ
Manufacturer:
Nexperia USA Inc.
Detailed description:
MOSFET N-CH 20V SOT1220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs, Transistors - Programmable Unijunction, Transistors - IGBTs - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - RF and Diodes - Variable Capacitance (Varicaps, Varactors) ...
Competitive Advantage:
We specialize in Nexperia USA Inc. PMPB10XNEZ electronic components. PMPB10XNEZ can be shipped within 24 hours after order. If you have any demands for PMPB10XNEZ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

PMPB10XNEZ Product Attributes

Part Number : PMPB10XNEZ
Manufacturer : Nexperia USA Inc.
Description : MOSFET N-CH 20V SOT1220
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 14 mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id : 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 34nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 2175pF @ 10V
FET Feature : -
Power Dissipation (Max) : 1.7W (Ta), 12.5W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : DFN2020MD-6
Package / Case : 6-UDFN Exposed Pad