ON Semiconductor - FDMC6679AZ

KEY Part #: K6416168

FDMC6679AZ Pricing (USD) [240031pcs Stock]

  • 1 pcs$0.15487
  • 3,000 pcs$0.15409

Part Number:
FDMC6679AZ
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET P-CH 30V POWER33.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - RF, Power Driver Modules, Transistors - IGBTs - Modules, Transistors - IGBTs - Single and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in ON Semiconductor FDMC6679AZ electronic components. FDMC6679AZ can be shipped within 24 hours after order. If you have any demands for FDMC6679AZ, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMC6679AZ Product Attributes

Part Number : FDMC6679AZ
Manufacturer : ON Semiconductor
Description : MOSFET P-CH 30V POWER33
Series : PowerTrench®
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 11.5A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 10 mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 91nC @ 10V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 3970pF @ 15V
FET Feature : -
Power Dissipation (Max) : 2.3W (Ta), 41W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-MLP (3.3x3.3)
Package / Case : 8-PowerWDFN