Vishay Siliconix - SUM70040M-GE3

KEY Part #: K6418099

SUM70040M-GE3 Pricing (USD) [51526pcs Stock]

  • 1 pcs$0.76265
  • 800 pcs$0.75885

Part Number:
SUM70040M-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 100V 120A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Modules, Diodes - Zener - Single, Thyristors - SCRs, Diodes - Bridge Rectifiers and Transistors - JFETs ...
Competitive Advantage:
We specialize in Vishay Siliconix SUM70040M-GE3 electronic components. SUM70040M-GE3 can be shipped within 24 hours after order. If you have any demands for SUM70040M-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SUM70040M-GE3 Product Attributes

Part Number : SUM70040M-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 100V 120A D2PAK
Series : TrenchFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 7.5V, 10V
Rds On (Max) @ Id, Vgs : 3.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 120nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 5100pF @ 50V
FET Feature : -
Power Dissipation (Max) : 375W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-263-7
Package / Case : TO-263-7, D²Pak (6 Leads + Tab)

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