IRF7341TRPBF Pricing (USD) [170908pcs Stock]
- 1 pcs$0.41810
- 10 pcs$0.37002
- 100 pcs$0.27665
- 500 pcs$0.21455
- 1,000 pcs$0.16938
- Part Number:
- IRF7341TRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET 2N-CH 55V 4.7A 8-SOIC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Thyristors - DIACs, SIDACs, Transistors - Special Purpose, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - FETs, MOSFETs - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRF7341TRPBF electronic components. IRF7341TRPBF can be shipped within 24 hours after order. If you have any demands for IRF7341TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7341TRPBF Product Attributes
Part Number :
IRF7341TRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET 2N-CH 55V 4.7A 8-SOIC
Series :
HEXFET®
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
55V
Current - Continuous Drain (Id) @ 25°C :
4.7A
Rds On (Max) @ Id, Vgs :
50 mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
36nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
740pF @ 25V
Power - Max :
2W
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package :
8-SO
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