IPD60R600E6 Pricing (USD) [149703pcs Stock]
- 1 pcs$0.24707
- 2,500 pcs$0.21755
- 5,000 pcs$0.20667
- 12,500 pcs$0.19890
- 25,000 pcs$0.19269
- 62,500 pcs$0.18647
- Part Number:
- IPD60R600E6
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 600V 7.3A TO252.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Diodes - Bridge Rectifiers, Thyristors - DIACs, SIDACs, Power Driver Modules and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPD60R600E6 electronic components. IPD60R600E6 can be shipped within 24 hours after order. If you have any demands for IPD60R600E6, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD60R600E6 Product Attributes
Part Number :
IPD60R600E6
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 600V 7.3A TO252
Series :
CoolMOS™
Part Status :
Discontinued at Digi-Key
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
600 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs :
20.5nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
440pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
63W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-TO252-3
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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