IPB60R190C6ATMA1 Pricing (USD) [57512pcs Stock]
- 1 pcs$0.67987
- Part Number:
- IPB60R190C6ATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 600V 20.2A TO263.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - RF, Thyristors - TRIACs, Transistors - IGBTs - Modules, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - JFETs and Transistors - Bipolar (BJT) - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies IPB60R190C6ATMA1 electronic components. IPB60R190C6ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB60R190C6ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB60R190C6ATMA1 Product Attributes
Part Number :
IPB60R190C6ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 600V 20.2A TO263
Series :
CoolMOS™
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
190 mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs :
63nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1400pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
151W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D²PAK (TO-263AB)
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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