FDMS4435BZ Pricing (USD) [159811pcs Stock]
- 1 pcs$0.23260
- 3,000 pcs$0.23145
- Part Number:
- FDMS4435BZ
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET P-CH 30V 9A POWER56.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - Special Purpose, Diodes - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Power Driver Modules, Transistors - IGBTs - Arrays, Thyristors - SCRs - Modules and Transistors - IGBTs - Modules ...
- Competitive Advantage:
- We specialize in ON Semiconductor FDMS4435BZ electronic components. FDMS4435BZ can be shipped within 24 hours after order. If you have any demands for FDMS4435BZ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FDMS4435BZ Product Attributes
Part Number :
FDMS4435BZ
Manufacturer :
ON Semiconductor
Description :
MOSFET P-CH 30V 9A POWER56
Series :
PowerTrench®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
9A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
20 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
47nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
2050pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
2.5W (Ta), 39W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-PQFN (5x6)
Package / Case :
8-PowerTDFN
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