SSM3J352F,LF Pricing (USD) [1087457pcs Stock]
- 1 pcs$0.03401
- Part Number:
- SSM3J352F,LF
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- X34 SMALL LOW ON RESISTANCE PCH.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - JFETs, Diodes - Zener - Arrays, Thyristors - SCRs - Modules, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Arrays and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage SSM3J352F,LF electronic components. SSM3J352F,LF can be shipped within 24 hours after order. If you have any demands for SSM3J352F,LF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3J352F,LF Product Attributes
Part Number :
SSM3J352F,LF
Manufacturer :
Toshiba Semiconductor and Storage
Description :
X34 SMALL LOW ON RESISTANCE PCH
Series :
U-MOSVI
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.8V, 10V
Rds On (Max) @ Id, Vgs :
110 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id :
1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
5.1nC @ 4.5V
Vgs (Max) :
±12V
Input Capacitance (Ciss) (Max) @ Vds :
210pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
1.2W (Ta)
Operating Temperature :
150°C
Mounting Type :
Surface Mount
Supplier Device Package :
S-Mini
Package / Case :
TO-236-3, SC-59, SOT-23-3
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