Vishay Siliconix - SQ3425EV-T1_GE3

KEY Part #: K6405140

SQ3425EV-T1_GE3 Pricing (USD) [366462pcs Stock]

  • 1 pcs$0.10093
  • 3,000 pcs$0.09710

Part Number:
SQ3425EV-T1_GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET P-CHANNEL 20V 7.4A 6TSOP.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - FETs, MOSFETs - RF, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs, Transistors - JFETs, Transistors - Bipolar (BJT) - RF and Diodes - Variable Capacitance (Varicaps, Varactors) ...
Competitive Advantage:
We specialize in Vishay Siliconix SQ3425EV-T1_GE3 electronic components. SQ3425EV-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ3425EV-T1_GE3, Please submit a Request for Quotation here or send us an email:
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SQ3425EV-T1_GE3 Product Attributes

Part Number : SQ3425EV-T1_GE3
Manufacturer : Vishay Siliconix
Description : MOSFET P-CHANNEL 20V 7.4A 6TSOP
Series : Automotive, AEC-Q101, TrenchFET®
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 7.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 60 mOhm @ 4.7A, 4.5V
Vgs(th) (Max) @ Id : 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 10.3nC @ 4.5V
Vgs (Max) : ±12V
Input Capacitance (Ciss) (Max) @ Vds : 840pF @ 10V
FET Feature : -
Power Dissipation (Max) : 5W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 6-TSOP
Package / Case : SOT-23-6 Thin, TSOT-23-6