ON Semiconductor - FDG312P

KEY Part #: K6405258

FDG312P Pricing (USD) [596208pcs Stock]

  • 1 pcs$0.06235
  • 3,000 pcs$0.06204

Part Number:
FDG312P
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET P-CH 20V 1.2A SC70-6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - Programmable Unijunction, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Arrays, Thyristors - TRIACs, Transistors - IGBTs - Arrays, Diodes - RF and Transistors - JFETs ...
Competitive Advantage:
We specialize in ON Semiconductor FDG312P electronic components. FDG312P can be shipped within 24 hours after order. If you have any demands for FDG312P, Please submit a Request for Quotation here or send us an email:
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FDG312P Product Attributes

Part Number : FDG312P
Manufacturer : ON Semiconductor
Description : MOSFET P-CH 20V 1.2A SC70-6
Series : PowerTrench®
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 180 mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 5nC @ 4.5V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 330pF @ 10V
FET Feature : -
Power Dissipation (Max) : 750mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SC-88 (SC-70-6)
Package / Case : 6-TSSOP, SC-88, SOT-363