PSMN102-200Y,115 Pricing (USD) [145442pcs Stock]
- 1 pcs$0.25558
- 1,500 pcs$0.25431
- Part Number:
- PSMN102-200Y,115
- Manufacturer:
- Nexperia USA Inc.
- Detailed description:
- MOSFET N-CH 200V 21.5A LFPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Thyristors - DIACs, SIDACs, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs, Transistors - Programmable Unijunction, Diodes - Bridge Rectifiers and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Nexperia USA Inc. PSMN102-200Y,115 electronic components. PSMN102-200Y,115 can be shipped within 24 hours after order. If you have any demands for PSMN102-200Y,115, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PSMN102-200Y,115 Product Attributes
Part Number :
PSMN102-200Y,115
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET N-CH 200V 21.5A LFPAK
Series :
TrenchMOS™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Current - Continuous Drain (Id) @ 25°C :
21.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
102 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id :
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
30.7nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1568pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
113W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
LFPAK56, Power-SO8
Package / Case :
SC-100, SOT-669
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