Part Number :
TPN1R603PL,L1Q
Manufacturer :
Toshiba Semiconductor and Storage
Description :
X35 PB-F POWER MOSFET TRANSISTOR
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.6 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id :
2.1V @ 300µA
Gate Charge (Qg) (Max) @ Vgs :
41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
3900pF @ 15V
Power Dissipation (Max) :
104W (Tc)
Operating Temperature :
175°C
Mounting Type :
Surface Mount
Supplier Device Package :
8-TSON Advance (3.3x3.3)
Package / Case :
8-PowerVDFN