FQD30N06TM Pricing (USD) [160021pcs Stock]
- 1 pcs$0.23230
- 2,500 pcs$0.23114
- Part Number:
- FQD30N06TM
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 60V 22.7A DPAK-3.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Single, Transistors - Programmable Unijunction and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in ON Semiconductor FQD30N06TM electronic components. FQD30N06TM can be shipped within 24 hours after order. If you have any demands for FQD30N06TM, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FQD30N06TM Product Attributes
Part Number :
FQD30N06TM
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 60V 22.7A DPAK-3
Series :
QFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
22.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
45 mOhm @ 11.4A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
945pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
2.5W (Ta), 44W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-252, (D-Pak)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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