Diodes Incorporated - DMN2028UFDF-7

KEY Part #: K6416222

DMN2028UFDF-7 Pricing (USD) [644086pcs Stock]

  • 1 pcs$0.05771
  • 3,000 pcs$0.05743

Part Number:
DMN2028UFDF-7
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET N-CH 20V 7.9A U-DFN2020-6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - Single, Transistors - Programmable Unijunction, Transistors - Special Purpose, Transistors - FETs, MOSFETs - Arrays and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Diodes Incorporated DMN2028UFDF-7 electronic components. DMN2028UFDF-7 can be shipped within 24 hours after order. If you have any demands for DMN2028UFDF-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN2028UFDF-7 Product Attributes

Part Number : DMN2028UFDF-7
Manufacturer : Diodes Incorporated
Description : MOSFET N-CH 20V 7.9A U-DFN2020-6
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 7.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.5V, 4.5V
Rds On (Max) @ Id, Vgs : 25 mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 18nC @ 8V
Vgs (Max) : ±8V
Input Capacitance (Ciss) (Max) @ Vds : 907pF @ 10V
FET Feature : -
Power Dissipation (Max) : 660mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : U-DFN2020-6 (Type F)
Package / Case : 6-UDFN Exposed Pad

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