ON Semiconductor - FDS2670

KEY Part #: K6409594

FDS2670 Pricing (USD) [117730pcs Stock]

  • 1 pcs$0.33940
  • 2,500 pcs$0.33771

Part Number:
FDS2670
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET N-CH 200V 3A 8-SO.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Single, Diodes - Bridge Rectifiers and Transistors - JFETs ...
Competitive Advantage:
We specialize in ON Semiconductor FDS2670 electronic components. FDS2670 can be shipped within 24 hours after order. If you have any demands for FDS2670, Please submit a Request for Quotation here or send us an email:
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FDS2670 Product Attributes

Part Number : FDS2670
Manufacturer : ON Semiconductor
Description : MOSFET N-CH 200V 3A 8-SO
Series : PowerTrench®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 130 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 43nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1228pF @ 100V
FET Feature : -
Power Dissipation (Max) : 2.5W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-SOIC
Package / Case : 8-SOIC (0.154", 3.90mm Width)