Infineon Technologies - IPF13N03LA G

KEY Part #: K6400886

[3241pcs Stock]


    Part Number:
    IPF13N03LA G
    Manufacturer:
    Infineon Technologies
    Detailed description:
    MOSFET N-CH 25V 30A DPAK.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Diodes - RF, Diodes - Rectifiers - Single, Diodes - Zener - Single, Power Driver Modules, Diodes - Rectifiers - Arrays and Thyristors - TRIACs ...
    Competitive Advantage:
    We specialize in Infineon Technologies IPF13N03LA G electronic components. IPF13N03LA G can be shipped within 24 hours after order. If you have any demands for IPF13N03LA G, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IPF13N03LA G Product Attributes

    Part Number : IPF13N03LA G
    Manufacturer : Infineon Technologies
    Description : MOSFET N-CH 25V 30A DPAK
    Series : OptiMOS™
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 25V
    Current - Continuous Drain (Id) @ 25°C : 30A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 12.8 mOhm @ 30A, 10V
    Vgs(th) (Max) @ Id : 2V @ 20µA
    Gate Charge (Qg) (Max) @ Vgs : 8.3nC @ 5V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 1043pF @ 15V
    FET Feature : -
    Power Dissipation (Max) : 46W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : P-TO252-3
    Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63