Vishay Siliconix - IRFS9N60ATRLPBF

KEY Part #: K6393069

IRFS9N60ATRLPBF Pricing (USD) [41138pcs Stock]

  • 1 pcs$0.95045
  • 800 pcs$0.89613

Part Number:
IRFS9N60ATRLPBF
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 600V 9.2A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - Bipolar (BJT) - RF, Transistors - JFETs, Transistors - FETs, MOSFETs - Single, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF and Power Driver Modules ...
Competitive Advantage:
We specialize in Vishay Siliconix IRFS9N60ATRLPBF electronic components. IRFS9N60ATRLPBF can be shipped within 24 hours after order. If you have any demands for IRFS9N60ATRLPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFS9N60ATRLPBF Product Attributes

Part Number : IRFS9N60ATRLPBF
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 600V 9.2A D2PAK
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 9.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 750 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 49nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 1400pF @ 25V
FET Feature : -
Power Dissipation (Max) : 170W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D2PAK
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB