SIHB33N60E-GE3 Pricing (USD) [13245pcs Stock]
- 1 pcs$3.01439
- 10 pcs$2.69047
- 100 pcs$2.20619
- 500 pcs$1.78647
- 1,000 pcs$1.50667
- Part Number:
- SIHB33N60E-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 600V 33A TO-263.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Single, Thyristors - SCRs, Transistors - Special Purpose, Diodes - Bridge Rectifiers, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIHB33N60E-GE3 electronic components. SIHB33N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB33N60E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHB33N60E-GE3 Product Attributes
Part Number :
SIHB33N60E-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 600V 33A TO-263
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
99 mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
3508pF @ 100V
FET Feature :
-
Power Dissipation (Max) :
278W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D2PAK
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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