Vishay Siliconix - SI5915DC-T1-E3

KEY Part #: K6523454

[4160pcs Stock]


    Part Number:
    SI5915DC-T1-E3
    Manufacturer:
    Vishay Siliconix
    Detailed description:
    MOSFET 2P-CH 8V 3.4A 1206-8.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Arrays, Power Driver Modules, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - Bipolar (BJT) - Arrays ...
    Competitive Advantage:
    We specialize in Vishay Siliconix SI5915DC-T1-E3 electronic components. SI5915DC-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI5915DC-T1-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI5915DC-T1-E3 Product Attributes

    Part Number : SI5915DC-T1-E3
    Manufacturer : Vishay Siliconix
    Description : MOSFET 2P-CH 8V 3.4A 1206-8
    Series : TrenchFET®
    Part Status : Obsolete
    FET Type : 2 P-Channel (Dual)
    FET Feature : Logic Level Gate
    Drain to Source Voltage (Vdss) : 8V
    Current - Continuous Drain (Id) @ 25°C : 3.4A
    Rds On (Max) @ Id, Vgs : 70 mOhm @ 3.4A, 4.5V
    Vgs(th) (Max) @ Id : 450mV @ 250µA (Min)
    Gate Charge (Qg) (Max) @ Vgs : 9nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds : -
    Power - Max : 1.1W
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : 8-SMD, Flat Lead
    Supplier Device Package : 1206-8 ChipFET™