Infineon Technologies - IPS80R750P7AKMA1

KEY Part #: K6400666

IPS80R750P7AKMA1 Pricing (USD) [58450pcs Stock]

  • 1 pcs$0.77349
  • 10 pcs$0.68610
  • 100 pcs$0.54232
  • 500 pcs$0.42058
  • 1,000 pcs$0.31409

Part Number:
IPS80R750P7AKMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 800V 7A TO251-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - RF, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Infineon Technologies IPS80R750P7AKMA1 electronic components. IPS80R750P7AKMA1 can be shipped within 24 hours after order. If you have any demands for IPS80R750P7AKMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPS80R750P7AKMA1 Product Attributes

Part Number : IPS80R750P7AKMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 800V 7A TO251-3
Series : CoolMOS™ P7
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 750 mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs : 17nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 460pF @ 500V
FET Feature : -
Power Dissipation (Max) : 51W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO251-3
Package / Case : TO-251-3 Short Leads, IPak, TO-251AA

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