DMTH10H015LK3-13 Pricing (USD) [214990pcs Stock]
- 1 pcs$0.17204
- 2,500 pcs$0.15227
- Part Number:
- DMTH10H015LK3-13
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET NCH 100V 52.5A TO252.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - Special Purpose, Diodes - Bridge Rectifiers, Power Driver Modules, Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Single, Diodes - RF and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMTH10H015LK3-13 electronic components. DMTH10H015LK3-13 can be shipped within 24 hours after order. If you have any demands for DMTH10H015LK3-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMTH10H015LK3-13 Product Attributes
Part Number :
DMTH10H015LK3-13
Manufacturer :
Diodes Incorporated
Description :
MOSFET NCH 100V 52.5A TO252
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Current - Continuous Drain (Id) @ 25°C :
52.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
15 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
33.3nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1871pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
2.1W (Ta)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-252-4L
Package / Case :
TO-252-5, DPak (4 Leads + Tab), TO-252AD
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