Infineon Technologies - SPP15P10PLGHKSA1

KEY Part #: K6407109

[8627pcs Stock]


    Part Number:
    SPP15P10PLGHKSA1
    Manufacturer:
    Infineon Technologies
    Detailed description:
    MOSFET P-CH 100V 15A TO-220.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - JFETs ...
    Competitive Advantage:
    We specialize in Infineon Technologies SPP15P10PLGHKSA1 electronic components. SPP15P10PLGHKSA1 can be shipped within 24 hours after order. If you have any demands for SPP15P10PLGHKSA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SPP15P10PLGHKSA1 Product Attributes

    Part Number : SPP15P10PLGHKSA1
    Manufacturer : Infineon Technologies
    Description : MOSFET P-CH 100V 15A TO-220
    Series : SIPMOS®
    Part Status : Obsolete
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 100V
    Current - Continuous Drain (Id) @ 25°C : 15A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 4.5V, 10V
    Rds On (Max) @ Id, Vgs : 200 mOhm @ 11.3A, 10V
    Vgs(th) (Max) @ Id : 2V @ 1.54mA
    Gate Charge (Qg) (Max) @ Vgs : 62nC @ 10V
    Vgs (Max) : ±20V
    Input Capacitance (Ciss) (Max) @ Vds : 1490pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 128W (Tc)
    Operating Temperature : -55°C ~ 175°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : PG-TO220-3
    Package / Case : TO-220-3

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