Vishay Siliconix - IRFIBE30GPBF

KEY Part #: K6407024

IRFIBE30GPBF Pricing (USD) [30363pcs Stock]

  • 1 pcs$1.18548
  • 10 pcs$1.01724
  • 100 pcs$0.81751
  • 500 pcs$0.63583
  • 1,000 pcs$0.52683

Part Number:
IRFIBE30GPBF
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 800V 2.1A TO220FP.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - RF, Thyristors - SCRs, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - JFETs, Diodes - Zener - Single and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Vishay Siliconix IRFIBE30GPBF electronic components. IRFIBE30GPBF can be shipped within 24 hours after order. If you have any demands for IRFIBE30GPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFIBE30GPBF Product Attributes

Part Number : IRFIBE30GPBF
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 800V 2.1A TO220FP
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 2.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3 Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 78nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1300pF @ 25V
FET Feature : -
Power Dissipation (Max) : 35W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220-3
Package / Case : TO-220-3 Full Pack, Isolated Tab

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