[3229pcs Stock]
- Part Number:
- IXTD1R4N60P 11
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 600V.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Thyristors - TRIACs, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Diodes - RF, Power Driver Modules and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in IXYS IXTD1R4N60P 11 electronic components. IXTD1R4N60P 11 can be shipped within 24 hours after order. If you have any demands for IXTD1R4N60P 11, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTD1R4N60P 11 Product Attributes
Part Number :
IXTD1R4N60P 11
Manufacturer :
IXYS
Description :
MOSFET N-CH 600V
Series :
PolarHV™
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
9 Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id :
5.5V @ 25µA
Gate Charge (Qg) (Max) @ Vgs :
5.2nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
140pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
50W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
Die
Package / Case :
Die
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