Diodes Incorporated - DMP10H4D2S-7

KEY Part #: K6395969

DMP10H4D2S-7 Pricing (USD) [912760pcs Stock]

  • 1 pcs$0.04052
  • 3,000 pcs$0.03681

Part Number:
DMP10H4D2S-7
Manufacturer:
Diodes Incorporated
Detailed description:
MOSFET P-CH 100V 0.27A SOT23.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - Special Purpose, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modules, Thyristors - TRIACs, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Single and Transistors - FETs, MOSFETs - RF ...
Competitive Advantage:
We specialize in Diodes Incorporated DMP10H4D2S-7 electronic components. DMP10H4D2S-7 can be shipped within 24 hours after order. If you have any demands for DMP10H4D2S-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMP10H4D2S-7 Product Attributes

Part Number : DMP10H4D2S-7
Manufacturer : Diodes Incorporated
Description : MOSFET P-CH 100V 0.27A SOT23
Series : -
Part Status : Active
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Current - Continuous Drain (Id) @ 25°C : 270mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 4.2 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 1.8nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 87pF @ 25V
FET Feature : -
Power Dissipation (Max) : 380mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-23
Package / Case : TO-236-3, SC-59, SOT-23-3