DMTH6010SCT Pricing (USD) [51384pcs Stock]
- 1 pcs$0.72331
- 50 pcs$0.57949
- 100 pcs$0.50707
- 500 pcs$0.39322
- 1,000 pcs$0.29366
- Part Number:
- DMTH6010SCT
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET BVDSS 41V 60VTO220-3TU.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs - Modules, Diodes - Zener - Arrays, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMTH6010SCT electronic components. DMTH6010SCT can be shipped within 24 hours after order. If you have any demands for DMTH6010SCT, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMTH6010SCT Product Attributes
Part Number :
DMTH6010SCT
Manufacturer :
Diodes Incorporated
Description :
MOSFET BVDSS 41V 60VTO220-3TU
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
7.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
36.3nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1940pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
2.8W (Ta), 125W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220-3
Package / Case :
TO-220-3
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