Infineon Technologies - IPP120N20NFDAKSA1

KEY Part #: K6400456

IPP120N20NFDAKSA1 Pricing (USD) [13227pcs Stock]

  • 1 pcs$2.99235
  • 10 pcs$2.67152
  • 100 pcs$2.19076
  • 500 pcs$1.77400
  • 1,000 pcs$1.49615

Part Number:
IPP120N20NFDAKSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 200V 84A TO220.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Single, Diodes - Rectifiers - Single, Transistors - JFETs, Thyristors - SCRs, Diodes - RF, Transistors - FETs, MOSFETs - RF and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in Infineon Technologies IPP120N20NFDAKSA1 electronic components. IPP120N20NFDAKSA1 can be shipped within 24 hours after order. If you have any demands for IPP120N20NFDAKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP120N20NFDAKSA1 Product Attributes

Part Number : IPP120N20NFDAKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 200V 84A TO220
Series : OptiMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 12 mOhm @ 84A, 10V
Vgs(th) (Max) @ Id : 4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs : 87nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 6650pF @ 100V
FET Feature : -
Power Dissipation (Max) : 300W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : PG-TO220-3
Package / Case : TO-220-3