Toshiba Semiconductor and Storage - TPCC8103(TE12L,QM)

KEY Part #: K6400420

TPCC8103(TE12L,QM) Pricing (USD) [76032pcs Stock]

  • 1 pcs$0.56443
  • 10 pcs$0.49921
  • 100 pcs$0.39460
  • 500 pcs$0.28947
  • 1,000 pcs$0.22853

Part Number:
TPCC8103(TE12L,QM)
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
MOSFET P-CH 30V 18A 8TSON.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - RF, Thyristors - TRIACs, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TPCC8103(TE12L,QM) electronic components. TPCC8103(TE12L,QM) can be shipped within 24 hours after order. If you have any demands for TPCC8103(TE12L,QM), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPCC8103(TE12L,QM) Product Attributes

Part Number : TPCC8103(TE12L,QM)
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET P-CH 30V 18A 8TSON
Series : U-MOSV
Part Status : Discontinued at Digi-Key
FET Type : P-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 4V, 10V
Rds On (Max) @ Id, Vgs : 12 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id : 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 1600pF @ 10V
FET Feature : -
Power Dissipation (Max) : 700mW (Ta), 27W (Tc)
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : 8-TSON Advance (3.3x3.3)
Package / Case : 8-PowerVDFN

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