DMT6007LFG-7 Pricing (USD) [181579pcs Stock]
- 1 pcs$0.20370
- 2,000 pcs$0.18028
- Part Number:
- DMT6007LFG-7
- Manufacturer:
- Diodes Incorporated
- Detailed description:
- MOSFET BVDSS 41V 60V POWERDI333.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Power Driver Modules and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in Diodes Incorporated DMT6007LFG-7 electronic components. DMT6007LFG-7 can be shipped within 24 hours after order. If you have any demands for DMT6007LFG-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT6007LFG-7 Product Attributes
Part Number :
DMT6007LFG-7
Manufacturer :
Diodes Incorporated
Description :
MOSFET BVDSS 41V 60V POWERDI333
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Current - Continuous Drain (Id) @ 25°C :
15A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id :
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
41.3nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2090pF @ 30V
FET Feature :
-
Power Dissipation (Max) :
2.2W (Ta), 62.5W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PowerDI3333-8
Package / Case :
8-PowerWDFN
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