IXYS - IXTY1N80P

KEY Part #: K6395103

IXTY1N80P Pricing (USD) [59377pcs Stock]

  • 1 pcs$0.72801
  • 70 pcs$0.72439

Part Number:
IXTY1N80P
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 800V 1A TO-252.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Transistors - IGBTs - Modules, Transistors - IGBTs - Single, Transistors - Special Purpose, Thyristors - TRIACs, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Single and Power Driver Modules ...
Competitive Advantage:
We specialize in IXYS IXTY1N80P electronic components. IXTY1N80P can be shipped within 24 hours after order. If you have any demands for IXTY1N80P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTY1N80P Product Attributes

Part Number : IXTY1N80P
Manufacturer : IXYS
Description : MOSFET N-CH 800V 1A TO-252
Series : Polar™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Current - Continuous Drain (Id) @ 25°C : 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 14 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs : 9nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 250pF @ 25V
FET Feature : -
Power Dissipation (Max) : 42W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252, (D-Pak)
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63