Description :
MOSFET N-CH 1000V 1A TO-252
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Current - Continuous Drain (Id) @ 25°C :
1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
15 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id :
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs :
15.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
331pF @ 25V
Power Dissipation (Max) :
50W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-252, (D-Pak)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63