IXYS - IXTY1N100P

KEY Part #: K6395230

IXTY1N100P Pricing (USD) [62346pcs Stock]

  • 1 pcs$0.72483
  • 70 pcs$0.72122

Part Number:
IXTY1N100P
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 1000V 1A TO-252.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Power Driver Modules, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Single, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs and Transistors - FETs, MOSFETs - Arrays ...
Competitive Advantage:
We specialize in IXYS IXTY1N100P electronic components. IXTY1N100P can be shipped within 24 hours after order. If you have any demands for IXTY1N100P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTY1N100P Product Attributes

Part Number : IXTY1N100P
Manufacturer : IXYS
Description : MOSFET N-CH 1000V 1A TO-252
Series : Polar™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 15 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id : 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs : 15.5nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 331pF @ 25V
FET Feature : -
Power Dissipation (Max) : 50W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : TO-252, (D-Pak)
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63