Vishay Siliconix - SI5479DU-T1-GE3

KEY Part #: K6406064

[1448pcs Stock]


    Part Number:
    SI5479DU-T1-GE3
    Manufacturer:
    Vishay Siliconix
    Detailed description:
    MOSFET P-CH 12V 16A CHIPFET.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Single, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - RF, Power Driver Modules and Transistors - FETs, MOSFETs - Single ...
    Competitive Advantage:
    We specialize in Vishay Siliconix SI5479DU-T1-GE3 electronic components. SI5479DU-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5479DU-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI5479DU-T1-GE3 Product Attributes

    Part Number : SI5479DU-T1-GE3
    Manufacturer : Vishay Siliconix
    Description : MOSFET P-CH 12V 16A CHIPFET
    Series : TrenchFET®
    Part Status : Obsolete
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 12V
    Current - Continuous Drain (Id) @ 25°C : 16A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
    Rds On (Max) @ Id, Vgs : 21 mOhm @ 6.9A, 4.5V
    Vgs(th) (Max) @ Id : 1V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 51nC @ 8V
    Vgs (Max) : ±8V
    Input Capacitance (Ciss) (Max) @ Vds : 1810pF @ 6V
    FET Feature : -
    Power Dissipation (Max) : 3.1W (Ta), 17.8W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : PowerPAK® ChipFet Single
    Package / Case : PowerPAK® ChipFET™ Single