Vishay Siliconix - SI6473DQ-T1-E3

KEY Part #: K6406044

[1455pcs Stock]


    Part Number:
    SI6473DQ-T1-E3
    Manufacturer:
    Vishay Siliconix
    Detailed description:
    MOSFET P-CH 20V 6.2A 8-TSSOP.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Arrays, Thyristors - SCRs, Transistors - FETs, MOSFETs - RF, Diodes - RF, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single and Transistors - Special Purpose ...
    Competitive Advantage:
    We specialize in Vishay Siliconix SI6473DQ-T1-E3 electronic components. SI6473DQ-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI6473DQ-T1-E3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI6473DQ-T1-E3 Product Attributes

    Part Number : SI6473DQ-T1-E3
    Manufacturer : Vishay Siliconix
    Description : MOSFET P-CH 20V 6.2A 8-TSSOP
    Series : TrenchFET®
    Part Status : Obsolete
    FET Type : P-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 20V
    Current - Continuous Drain (Id) @ 25°C : 6.2A (Ta)
    Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
    Rds On (Max) @ Id, Vgs : 12.5 mOhm @ 9.5A, 4.5V
    Vgs(th) (Max) @ Id : 450mV @ 250µA (Min)
    Gate Charge (Qg) (Max) @ Vgs : 70nC @ 5V
    Vgs (Max) : ±8V
    Input Capacitance (Ciss) (Max) @ Vds : -
    FET Feature : -
    Power Dissipation (Max) : 1.08W (Ta)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Surface Mount
    Supplier Device Package : 8-TSSOP
    Package / Case : 8-TSSOP (0.173", 4.40mm Width)