Infineon Technologies - IPB60R099CPATMA1

KEY Part #: K6416960

IPB60R099CPATMA1 Pricing (USD) [21324pcs Stock]

  • 1 pcs$1.93276

Part Number:
IPB60R099CPATMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 600V 31A D2PAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Special Purpose, Transistors - FETs, MOSFETs - Arrays, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Transistors - Programmable Unijunction and Transistors - IGBTs - Modules ...
Competitive Advantage:
We specialize in Infineon Technologies IPB60R099CPATMA1 electronic components. IPB60R099CPATMA1 can be shipped within 24 hours after order. If you have any demands for IPB60R099CPATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB60R099CPATMA1 Product Attributes

Part Number : IPB60R099CPATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 600V 31A D2PAK
Series : CoolMOS™
Part Status : Not For New Designs
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 99 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id : 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs : 80nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 2800pF @ 100V
FET Feature : -
Power Dissipation (Max) : 255W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : PG-TO263-3-2
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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