IRFH4251DTRPBF Pricing (USD) [61761pcs Stock]
- 1 pcs$0.63309
- 4,000 pcs$0.61691
- Part Number:
- IRFH4251DTRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET 2N-CH 25V 64A/188A PQFN.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Arrays, Diodes - Rectifiers - Single, Diodes - Rectifiers - Arrays and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFH4251DTRPBF electronic components. IRFH4251DTRPBF can be shipped within 24 hours after order. If you have any demands for IRFH4251DTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFH4251DTRPBF Product Attributes
Part Number :
IRFH4251DTRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET 2N-CH 25V 64A/188A PQFN
Series :
FASTIRFET™
Part Status :
Not For New Designs
FET Type :
2 N-Channel (Dual), Schottky
FET Feature :
Logic Level Gate
Drain to Source Voltage (Vdss) :
25V
Current - Continuous Drain (Id) @ 25°C :
64A, 188A
Rds On (Max) @ Id, Vgs :
3.2 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id :
2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds :
1314pF @ 13V
Power - Max :
31W, 63W
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-PowerVDFN
Supplier Device Package :
PQFN (5x6)
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