Infineon Technologies - BSS139H6906XTSA1

KEY Part #: K6421160

BSS139H6906XTSA1 Pricing (USD) [372208pcs Stock]

  • 1 pcs$0.10727
  • 3,000 pcs$0.10673

Part Number:
BSS139H6906XTSA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 250V 100MA SOT223.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Diodes - Bridge Rectifiers, Thyristors - DIACs, SIDACs, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Transistors - FETs, MOSFETs - Single ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSS139H6906XTSA1 Product Attributes

Part Number : BSS139H6906XTSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 250V 100MA SOT223
Series : SIPMOS®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 250V
Current - Continuous Drain (Id) @ 25°C : 100mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 0V, 10V
Rds On (Max) @ Id, Vgs : 14 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id : 1V @ 56µA
Gate Charge (Qg) (Max) @ Vgs : 3.5nC @ 5V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 76pF @ 25V
FET Feature : Depletion Mode
Power Dissipation (Max) : 360mW (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : SOT-223
Package / Case : TO-261-4, TO-261AA