SSR1N60BTM-WS Pricing (USD) [367383pcs Stock]
- 1 pcs$0.10068
- Part Number:
- SSR1N60BTM-WS
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 600V 0.9A DPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - FETs, MOSFETs - RF, Thyristors - TRIACs, Diodes - RF, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors) and Thyristors - SCRs ...
- Competitive Advantage:
- We specialize in ON Semiconductor SSR1N60BTM-WS electronic components. SSR1N60BTM-WS can be shipped within 24 hours after order. If you have any demands for SSR1N60BTM-WS, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSR1N60BTM-WS Product Attributes
Part Number :
SSR1N60BTM-WS
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 600V 0.9A DPAK
Series :
-
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
900mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
12 Ohm @ 450mA, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
7.7nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
215pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
2.5W (Ta), 28W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
D-Pak
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
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