PMPB215ENEA/FX Pricing (USD) [577363pcs Stock]
- 1 pcs$0.06438
- 3,000 pcs$0.06406
- Part Number:
- PMPB215ENEA/FX
- Manufacturer:
- Nexperia USA Inc.
- Detailed description:
- MOSFET N-CH 80V 2.8A 6DFN2020MD.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Modules, Transistors - IGBTs - Arrays, Diodes - Rectifiers - Single, Diodes - RF, Transistors - Special Purpose and Diodes - Zener - Arrays ...
- Competitive Advantage:
- We specialize in Nexperia USA Inc. PMPB215ENEA/FX electronic components. PMPB215ENEA/FX can be shipped within 24 hours after order. If you have any demands for PMPB215ENEA/FX, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMPB215ENEA/FX Product Attributes
Part Number :
PMPB215ENEA/FX
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET N-CH 80V 2.8A 6DFN2020MD
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Current - Continuous Drain (Id) @ 25°C :
2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
230 mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id :
2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
7.2nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
215pF @ 40V
FET Feature :
-
Power Dissipation (Max) :
1.6W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
6-DFN2020MD (2x2)
Package / Case :
6-UDFN Exposed Pad
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