NTD4970N-35G Pricing (USD) [92595pcs Stock]
- 1 pcs$0.42228
- 1,350 pcs$0.16010
- Part Number:
- NTD4970N-35G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- MOSFET N-CH 30V 38A IPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Zener - Single, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in ON Semiconductor NTD4970N-35G electronic components. NTD4970N-35G can be shipped within 24 hours after order. If you have any demands for NTD4970N-35G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NTD4970N-35G Product Attributes
Part Number :
NTD4970N-35G
Manufacturer :
ON Semiconductor
Description :
MOSFET N-CH 30V 38A IPAK
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
8.5A (Ta), 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
11 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
8.2nC @ 4.5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
774pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
1.38W (Ta), 24.6W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I-PAK
Package / Case :
TO-251-3 Stub Leads, IPak
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