BTS282ZE3180AATMA2 Pricing (USD) [31424pcs Stock]
- 1 pcs$1.31155
- 1,000 pcs$1.00084
- Part Number:
- BTS282ZE3180AATMA2
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 49V 80A TO-220-7.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Special Purpose, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Single and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in Infineon Technologies BTS282ZE3180AATMA2 electronic components. BTS282ZE3180AATMA2 can be shipped within 24 hours after order. If you have any demands for BTS282ZE3180AATMA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BTS282ZE3180AATMA2 Product Attributes
Part Number :
BTS282ZE3180AATMA2
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 49V 80A TO-220-7
Series :
TEMPFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
49V
Current - Continuous Drain (Id) @ 25°C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
6.5 mOhm @ 36A, 10V
Vgs(th) (Max) @ Id :
2V @ 240µA
Gate Charge (Qg) (Max) @ Vgs :
232nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4800pF @ 25V
FET Feature :
Temperature Sensing Diode
Power Dissipation (Max) :
300W (Tc)
Operating Temperature :
-40°C ~ 175°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
PG-TO263-7-1
Package / Case :
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
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