STMicroelectronics - STF6N65M2

KEY Part #: K6398612

STF6N65M2 Pricing (USD) [51104pcs Stock]

  • 1 pcs$0.72331
  • 10 pcs$0.65433
  • 100 pcs$0.52568
  • 500 pcs$0.40886
  • 1,000 pcs$0.32046

Part Number:
STF6N65M2
Manufacturer:
STMicroelectronics
Detailed description:
MOSFET N-CH 650V 4A TO-220FP.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Power Driver Modules, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - JFETs and Transistors - FETs, MOSFETs - Single ...
Competitive Advantage:
We specialize in STMicroelectronics STF6N65M2 electronic components. STF6N65M2 can be shipped within 24 hours after order. If you have any demands for STF6N65M2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STF6N65M2 Product Attributes

Part Number : STF6N65M2
Manufacturer : STMicroelectronics
Description : MOSFET N-CH 650V 4A TO-220FP
Series : MDmesh™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Current - Continuous Drain (Id) @ 25°C : 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.35 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 9.8nC @ 10V
Vgs (Max) : ±25V
Input Capacitance (Ciss) (Max) @ Vds : 226pF @ 100V
FET Feature : -
Power Dissipation (Max) : 20W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220FP
Package / Case : TO-220-3 Full Pack

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