IRFP3703PBF Pricing (USD) [19442pcs Stock]
- 1 pcs$2.03603
- 10 pcs$1.81789
- 100 pcs$1.49067
- 500 pcs$1.20708
- 1,000 pcs$0.96581
- Part Number:
- IRFP3703PBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 30V 210A TO-247AC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - FETs, MOSFETs - Single, Power Driver Modules, Thyristors - SCRs, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFP3703PBF electronic components. IRFP3703PBF can be shipped within 24 hours after order. If you have any demands for IRFP3703PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFP3703PBF Product Attributes
Part Number :
IRFP3703PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 30V 210A TO-247AC
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
210A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
7V, 10V
Rds On (Max) @ Id, Vgs :
2.8 mOhm @ 76A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
209nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
8250pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
3.8W (Ta), 230W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247AC
Package / Case :
TO-247-3
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