IXTP3N110 Pricing (USD) [16291pcs Stock]
- 1 pcs$2.92361
- 50 pcs$2.90906
- Part Number:
- IXTP3N110
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 1100V 3A TO-220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Transistors - IGBTs - Modules, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Diodes - RF, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in IXYS IXTP3N110 electronic components. IXTP3N110 can be shipped within 24 hours after order. If you have any demands for IXTP3N110, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTP3N110 Product Attributes
Part Number :
IXTP3N110
Manufacturer :
IXYS
Description :
MOSFET N-CH 1100V 3A TO-220
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1100V
Current - Continuous Drain (Id) @ 25°C :
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
4 Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
1350pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
150W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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