IRFB7440GPBF Pricing (USD) [140365pcs Stock]
- 1 pcs$0.26351
- 1,000 pcs$0.25294
- Part Number:
- IRFB7440GPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N CH 40V 120A TO220AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction, Transistors - IGBTs - Modules, Diodes - Zener - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Arrays and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFB7440GPBF electronic components. IRFB7440GPBF can be shipped within 24 hours after order. If you have any demands for IRFB7440GPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB7440GPBF Product Attributes
Part Number :
IRFB7440GPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N CH 40V 120A TO220AB
Series :
HEXFET®, StrongIRFET™
Part Status :
Not For New Designs
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
2.5 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id :
3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs :
135nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4730pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
208W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220AB
Package / Case :
TO-220-3
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