Infineon Technologies - IRFR13N20DTRPBF

KEY Part #: K6419823

IRFR13N20DTRPBF Pricing (USD) [135654pcs Stock]

  • 1 pcs$0.27266
  • 2,000 pcs$0.23303

Part Number:
IRFR13N20DTRPBF
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET N-CH 200V 13A DPAK.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - JFETs, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Single, Thyristors - DIACs, SIDACs, Diodes - Zener - Arrays and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Infineon Technologies IRFR13N20DTRPBF electronic components. IRFR13N20DTRPBF can be shipped within 24 hours after order. If you have any demands for IRFR13N20DTRPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFR13N20DTRPBF Product Attributes

Part Number : IRFR13N20DTRPBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 200V 13A DPAK
Series : HEXFET®
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Current - Continuous Drain (Id) @ 25°C : 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 235 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id : 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 830pF @ 25V
FET Feature : -
Power Dissipation (Max) : 110W (Tc)
Operating Temperature : -55°C ~ 175°C (TJ)
Mounting Type : Surface Mount
Supplier Device Package : D-Pak
Package / Case : TO-252-3, DPak (2 Leads + Tab), SC-63

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