IXYS - IXTH12N100

KEY Part #: K6410262

IXTH12N100 Pricing (USD) [7477pcs Stock]

  • 1 pcs$6.36984
  • 30 pcs$6.33815

Part Number:
IXTH12N100
Manufacturer:
IXYS
Detailed description:
MOSFET N-CH 1000V 12A TO-247.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Single, Diodes - Rectifiers - Single, Transistors - Special Purpose, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - Single and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in IXYS IXTH12N100 electronic components. IXTH12N100 can be shipped within 24 hours after order. If you have any demands for IXTH12N100, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXTH12N100 Product Attributes

Part Number : IXTH12N100
Manufacturer : IXYS
Description : MOSFET N-CH 1000V 12A TO-247
Series : MegaMOS™
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 1000V
Current - Continuous Drain (Id) @ 25°C : 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.05 Ohm @ 6A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 170nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 4000pF @ 25V
FET Feature : -
Power Dissipation (Max) : 300W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-247 (IXTH)
Package / Case : TO-247-3

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