IXTH1N170DHV Pricing (USD) [9949pcs Stock]
- 1 pcs$4.14170
- Part Number:
- IXTH1N170DHV
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Single, Transistors - Special Purpose, Thyristors - TRIACs, Transistors - FETs, MOSFETs - RF, Diodes - Bridge Rectifiers, Diodes - Rectifiers - Arrays and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in IXYS IXTH1N170DHV electronic components. IXTH1N170DHV can be shipped within 24 hours after order. If you have any demands for IXTH1N170DHV, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTH1N170DHV Product Attributes
Part Number :
IXTH1N170DHV
Manufacturer :
IXYS
Description :
MOSFET N-CH
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1700V
Current - Continuous Drain (Id) @ 25°C :
1A (Tj)
Drive Voltage (Max Rds On, Min Rds On) :
0V
Rds On (Max) @ Id, Vgs :
16 Ohm @ 500mA, 0V
Vgs(th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
47nC @ 5V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
3090pF @ 25V
FET Feature :
Depletion Mode
Power Dissipation (Max) :
290W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247HV
Package / Case :
TO-247-3 Variant
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