IXFQ50N60P3 Pricing (USD) [13359pcs Stock]
- 1 pcs$3.54764
- 10 pcs$3.19287
- 100 pcs$2.62525
- 500 pcs$2.19953
- 1,000 pcs$1.91572
- Part Number:
- IXFQ50N60P3
- Manufacturer:
- IXYS
- Detailed description:
- MOSFET N-CH 600V 50A TO3P.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Diodes - Rectifiers - Arrays, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - RF, Diodes - RF, Transistors - Special Purpose, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - Single ...
- Competitive Advantage:
- We specialize in IXYS IXFQ50N60P3 electronic components. IXFQ50N60P3 can be shipped within 24 hours after order. If you have any demands for IXFQ50N60P3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXFQ50N60P3 Product Attributes
Part Number :
IXFQ50N60P3
Manufacturer :
IXYS
Description :
MOSFET N-CH 600V 50A TO3P
Series :
HiPerFET™, Polar3™
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
145 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id :
5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs :
94nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
6300pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1040W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-3P
Package / Case :
TO-3P-3, SC-65-3
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