SI4435DYTRPBF Pricing (USD) [211994pcs Stock]
- 1 pcs$0.17447
- 4,000 pcs$0.15443
- Part Number:
- SI4435DYTRPBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET P-CH 30V 8A 8-SOIC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - TRIACs, Transistors - IGBTs - Modules, Transistors - IGBTs - Single, Diodes - RF, Transistors - Programmable Unijunction and Thyristors - DIACs, SIDACs ...
- Competitive Advantage:
- We specialize in Infineon Technologies SI4435DYTRPBF electronic components. SI4435DYTRPBF can be shipped within 24 hours after order. If you have any demands for SI4435DYTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4435DYTRPBF Product Attributes
Part Number :
SI4435DYTRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET P-CH 30V 8A 8-SOIC
Series :
HEXFET®
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
20 mOhm @ 8A, 10V
Vgs(th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2320pF @ 15V
FET Feature :
-
Power Dissipation (Max) :
2.5W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
8-SO
Package / Case :
8-SOIC (0.154", 3.90mm Width)
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